Nano-Structured Binary-Semiconductor Composite Films for Dye-Sensitized Solid-State Solar Cells

Abstract

The studies reported in this doctoral thesis were conducted to investigate the dye-sensitized solar cells of the heterostructure form, n-Semiconductor system/ Rudye/ p-Copper iodide were intended to minimize charge recombination by widely separating the photo-generated charge carriers. A large number of binary systems have been tested in our studies as semiconductor electrodes of dye sensitized solar cells, combining the materials such as TiO2, SnC>2, delivered the highest photocurrent of 9.0 mA/cm2 and photovoltage of 480 mV at irradiation when the ZnO% in the composite film is about 50% (by weight). But with the same preparation conditions, dye-sensitized solid-state photovoltaic cells made only with SnOj made only with ZnO also generated feeble photocurrents (~1 mA/cm2). and photovoltage of 350 mV was obtained when AhO3% in the film was 6% and it was and photovoltage of 480 mV. In th :se cases it was surprising how the performance of S11O2/AI2O3, and SnCVMgO showed significant difference. 1 'The dye-sensitized solid-state cell made from composite film of SnCh and ZnO semiconductor composite films. The utilization of binary semiconductor systems in were inactive to the photo response and cells 1000 W/m2 2 In the S11O2/AI2O3 system, the optimum photocurrent of 1.7 mA/cm ~ 4% when the SnO2/MgO system delivered optimum photocurrent of 2.5 mA/cm2 ZnO, N^Os, AI2O3, MgO etc. Among those systems, composite films of SnO2/ZnO, performance of dye-sensitized solid-state solar cells consisting of binary