Abstract:
The studies reported in this doctoral thesis were conducted to investigate the
dye-sensitized solar cells of the heterostructure form, n-Semiconductor system/ Rudye/
p-Copper iodide were intended to minimize charge recombination by widely
separating the photo-generated charge carriers.
A large number of binary systems have been tested in our studies as semiconductor
electrodes of dye sensitized solar cells, combining the materials such as TiO2, SnC>2,
delivered the highest photocurrent of 9.0 mA/cm2 and photovoltage of 480 mV at
irradiation when the ZnO% in the composite film is about 50% (by
weight). But with the same preparation conditions, dye-sensitized solid-state
photovoltaic cells made only with SnOj
made only with ZnO also generated feeble photocurrents (~1 mA/cm2).
and
photovoltage of 350 mV was obtained when AhO3% in the film was 6% and it was
and photovoltage of 480 mV. In th :se cases it was surprising how the performance of
S11O2/AI2O3, and SnCVMgO showed significant difference.
1
'The dye-sensitized solid-state cell made from composite film of SnCh and ZnO
semiconductor composite films. The utilization of binary semiconductor systems in
were inactive to the photo response and cells
1000 W/m2
2
In the S11O2/AI2O3 system, the optimum photocurrent of 1.7 mA/cm
~ 4% when the SnO2/MgO system delivered optimum photocurrent of 2.5 mA/cm2
ZnO, N^Os, AI2O3, MgO etc. Among those systems, composite films of SnO2/ZnO,
performance of dye-sensitized solid-state solar cells consisting of binary
