dc.contributor.author |
Siriwardane, Edirisuriya M. Dilanga |
|
dc.contributor.author |
Zhao, Young |
|
dc.contributor.author |
Perera, Indika |
|
dc.contributor.author |
Hu, Jianhu |
|
dc.date.accessioned |
2022-10-18T09:10:16Z |
|
dc.date.available |
2022-10-18T09:10:16Z |
|
dc.date.issued |
2022 |
|
dc.identifier.citation |
Siriwardane, E.M.D., Zhao, Y., Perera, I. et al. (2022). Generative design of stable semiconductor materials using deep learning and density functional theory. npj Comput Mater ,8, 164. https://doi.org/10.1038/s41524-022-00850-3 |
en_US |
dc.identifier.other |
https://doi.org/10.1038/s41524-022-00850-3 |
|
dc.identifier.uri |
http://archive.cmb.ac.lk:8080/xmlui/handle/70130/6914 |
|
dc.description |
The views, perspectives, and content do not necessarily represent the official views of the NSF. We also would like to thank the support received from the department of computer science and engineering of the University of Moratuwa, Sri Lanka. |
en_US |
dc.description.abstract |
Semiconductor device technology has greatly developed in complexity since discovering the bipolar transistor. In this work, we developed a computational pipeline to discover stable semiconductors by combining generative adversarial networks (GAN), classifiers, and high-throughput first-principles calculations. We used CubicGAN, a GAN-based algorithm for generating cubic materials and developed a classifier to screen the semiconductors and studied their stability using first principles. We found 12 stable AA0MH6 semiconductors in the F-43m space group including BaNaRhH6, BaSrZnH6, BaCsAlH6, SrTlIrH6, KNaNiH6, NaYRuH6, CsKSiH6, CaScMnH6, YZnMnH6, NaZrMnH6, AgZrMnH6, and ScZnMnH6. Previous research reported that five AA0IrH6 semiconductors with the same space group were synthesized. Our research shows that AA0MnH6 and NaYRuH6 semiconductors have considerably different properties compared to the rest of the AA0MH6 semiconductors. Based on the accurate hybrid functional calculations, AA 0MH6 semiconductors are found to be wide-bandgap semiconductors. Moreover, BaSrZnH6 and KNaNiH6 are direct-bandgap semiconductors, whereas others exhibit indirect bandgaps. |
en_US |
dc.description.sponsorship |
The research reported in this work was supported in part by National Science Foundation under the grant and 1940099, 1905775, and 2110033. |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
NPJ Computational Materials |
en_US |
dc.subject |
Semiconductors |
en_US |
dc.subject |
Deep Learning |
en_US |
dc.subject |
Density Functional Theory |
en_US |
dc.subject |
Materials |
en_US |
dc.title |
Generative design of stable semiconductor materials using deep learning and density functional theory |
en_US |
dc.type |
Article |
en_US |