Abstract:
The n-type and p-type cuprous oxide thin films were
electrodeposited potentiostatically in acetate and lactate baths,
respectively. Sulfur treatment of n-type and p-type cuprous
oxide surfaces were achieved using gaseous (NH4)2S. Sulfur treated Cu2O films were annealed in air at 100, 150, 200,
250, 350, and 450 8C for unique times to obtain the best
photocurrent. Unannealed and annealed samples of sulfur treated and untreated cuprous oxide were then investigated
using high-energy X-ray diffraction (HEXRD). The HEXRD
measurements and the pair distribution function (PDF)
analysis revealed that the sulfur treatment leads to the
formation of crystalline CuS on Cu2O film surfaces. The
present study also shows that the sulfur treatment causes minor
structural changes in Cu2O samples due to the formation of
CuS. It was observed that the sulfur-treated cuprous oxide
samples retarded the formation of CuO at higher temperatures
showing good thermal stability and enhancement of the
photoactivity of the n-type and p-type cuprous oxides
